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| Manufacturer | Infineon Technologies (International Rectifier) |
| Manufacturer Part No. | IRFB4110PBF |
| Package / Case | TO-220AB |
| RoHS | Compliant |
| Datasheet | Download PDF (349 KB) |
The Infineon IRFB4110PBF is a 100V N-Channel HEXFET® Power MOSFET with an extremely low on-resistance of 3.7 mΩ typical and a continuous drain current of 180A. Based on Infineon's trench MOSFET technology, it combines low conduction losses with excellent dv/dt ruggedness, making it a top choice for synchronous rectification, EV charger power stages, and motor drives.
| Drain-Source Voltage (VDS) | 100V |
| Continuous Drain Current (ID) | 180A |
| Rds(on) Max | 4.5 mΩ @ VGS = 10V |
| Rds(on) Typical | 3.7 mΩ |
| Power Dissipation (PD) | 370W |
| Gate Charge (Qg) | 150 nC |
| Package | TO-220AB |
| Technology | HEXFET® Trench MOSFET |
| Operating Temperature | -55°C to +175°C |
| RoHS Compliant | Yes (PBF = Lead-free) |
| Stock Status | Available on request |
| Minimum Order Quantity (MOQ) | 1,000 pcs |
| Pricing | Competitive — |
| Delivery | Pan India |
Whether you require standard components or hard-to-find parts, our team is committed to delivering the right solutions, on time and at competitive prices.