| Manufacturer | Toshiba Electronic Devices & Storage |
| Manufacturer Part No. | TK100A06N1 / TK100E06N1 |
| Package / Case | TO-220SIS |
| RoHS | Compliant |
| Datasheet | Download PDF (250 KB) |
The Toshiba TK100A06N1 (also TK100E06N1) is a 60V, 100A N-Channel MOSFET built on Toshiba's U-MOSVIII-H 8th generation trench technology. This platform delivers industry-leading on-resistance per die area, translating to low conduction losses and excellent thermal performance in EV on-board chargers, synchronous buck converters, and battery charger designs.
| Drain-Source Voltage (VDS) | 60V |
| Continuous Drain Current (ID) | 100A |
| Technology | U-MOSVIII-H (8th Gen Trench) |
| Package | TO-220SIS |
| RoHS Compliant | Yes (PBF = Lead-free) |
| Stock Status | Available on request |
| Minimum Order Quantity (MOQ) | 1,000 pcs |
| Pricing | Competitive — |
| Delivery | Pan India |